AO4264E general description product summary v ds i d (at v gs =10v) 13.5a r ds(on) (at v gs =10v) < 9.8m? r ds(on) (at v gs =4.5v) < 13.5m? typical esd protection hbm class 2 applications 100% uis tested 100% rg tested 60v n-channel alphasgt tm orderable part number package type form minimum order quantity 60v ? trench power alphasgt tm technology ? low r ds(on) ? low gate charge ? esd protected AO4264E so-8 tape & reel 3000 ? high efficiency power supply ? secondary synchronus rectifier soic-8 top view bottom view d d d d s s s g g d s pin1 pin1 symbol v ds v gs i dm i as avalanche energy l=0.3mh c e as v ds spike g v spike t j , t stg symbol t 10s steady-state steady-state r q jl t a =25c t a =70c t a =25c avalanche current c w i d v a 17 54 mj 43 13.5 parameter max c units junction and storage temperature range -55 to 150 typ thermal characteristics maximum junction-to-ambient a c/w r q ja 31 59 40 va absolute maximum ratings t a =25c unless otherwise noted 20 v maximum units AO4264E so-8 tape & reel 3000 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 24 power dissipation b 2.0 t a =70c 10s p d 60 72 3.1 gate-source voltage pulsed drain current c 10.5 parameter drain-source voltage continuous drain current rev.1.0: may 2016 www.aosmd.com page 1 of 5
AO4264E symbol min typ max units bv dss 60 v v ds =60v, v gs =0v 1 t j =55c 5 i gss 10 a v gs(th) gate threshold voltage 1.4 1.8 2.4 v 8 9.8 t j =125c 12.5 15.0 10.5 13.5 m? g fs 48 s v sd 0.72 1 v i s 4 a c iss 1100 pf c oss 300 pf c rss 28 pf r g 0.6 1.2 2.0 ? q g (10v) 14.5 25 nc q g (4.5v) 7 13 nc q gs 2.5 nc q gd 3.5 nc t d(on) 6.5 ns t r 3.5 ns t d(off) 22 ns t f 3 ns m? v gs =10v, v ds =30v, i d =13.5a total gate charge electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz i dss a zero gate voltage drain current drain-source breakdown voltage i d =250 m a, v gs =0v r ds(on) static drain-source on-resistance gate source charge gate drain charge total gate charge switching parameters turn-on delaytime v ds =0v, v gs =20v maximum body-diode continuous current input capacitance gate-body leakage current turn-off delaytime turn-off fall time v gs =10v, v ds =30v, r l =2.2 w , r gen =3 w diode forward voltage dynamic parameters v gs =4.5v, i d =11.5a turn-on rise time reverse transfer capacitance v gs =0v, v ds =30v, f=1mhz v ds =v gs, i d =250 m a output capacitance forward transconductance i s =1a, v gs =0v v ds =5v, i d =13.5a v gs =10v, i d =13.5a t f 3 ns t rr 18.5 ns q rr 59 nc applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applicatio ns or uses of its products. aos reserves the right to improve product design,functions and reliability without no tice. body diode reverse recovery charge body diode reverse recovery time i f =13.5a, di/dt=500a/ m s turn-off fall time i f =13.5a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. g. the spike duty cycle 5% max, limited by junction temperature tj(max)=125 c. rev.10.: may 2016 www.aosmd.com page 2 of 5
AO4264E typical electrical and thermal characteristics 0 10 20 30 40 50 60 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 4 6 8 10 12 14 0 3 6 9 12 15 r ds(on) (m w ) i d (a) figure 3: on - resistance vs. drain current and gate 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =4.5v i d =11.5a v gs =10v i d =13.5a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 10 20 30 40 50 60 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics (note e) v gs =2.5v 3v 3.5v 10v 4.5v 6v d figure 3: on - resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c figure 4: on - resistance vs. junction temperature (note e) 0 5 10 15 20 25 30 35 2 4 6 8 10 r ds(on) (m w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =13.5a 25 c 125 c rev.10.: may 2016 www.aosmd.com page 3 of 5
AO4264E typical electrical and thermal characteristics 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - to - 0 2 4 6 8 10 0 3 6 9 12 15 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 300 600 900 1200 1500 0 10 20 30 40 50 60 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =30v i d =13.5a t j(max) =150 c t a =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) v > or equal to 4.5v 10 m s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms figure 10: single pulse power rating junction - to - ambient (note f) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse v gs > or equal to 4.5v figure 9: maximum forward biased safe operating area (note f) r q ja =75 c/w rev.10.: may 2016 www.aosmd.com page 4 of 5
AO4264E - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar figure a: gate charge test circuit & waveforms figure b: resistive switching test circuit & wavefor ms figure c: unclamped inductive switching (uis) test c ircuit & waveforms vdd vgs id vgs rg dut - + vdc vgs vds id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr figure d: diode recovery test circuit & waveforms rev.10.: may 2016 www.aosmd.com page 5 of 5
|
